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TIP122

TIP120 / TIP121/ TIP122 / TIP125 / TIP126 / TIP127

Complementary power Darlington transistors

Featuress

■ Low collector-emitter saturation voltage
■ Complementary NPN - PNP transistors

Description
The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage.

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TIP122
TIP120 / TIP121/ TIP122 / TIP125 / TIP126 / TIP127

Complementary power Darlington transistors

Featuress

■ Low collector-emitter saturation voltage
■ Complementary NPN - PNP transistors

Description
The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage.
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         Guangdong ICP for 2024207917       Ali International Station

 

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